Panasonic MA22D28 Specification Sheet

Schottky Barrier Diodes (SBD)
MA22D28
Silicon epitaxial planar type
For high speed switching
■ Features
• Forward current I = 1.5 A rectification is possible
F(AV)
• Low forward voltage V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
* 2
surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on a alumina PC board
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. * : t measuring instrument
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
F
= 25°C
a
Symbol Rating
V 30
R
V 30
RRM
* 1
I 1.5
F(AV)
I 30
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
V I
F3 F
I V
R R
C V
t R
t I
rr F
I
rr
Bias Application Unit (N-50BU)
A
Unit
V
V
A
A
°C
°C
Marking Symbol: 3Z
Conditions
= 0.5 A
= 1.0 A
= 1.5 A
= 30 V
= 10 V, f = 1 MHz
= I = 100 mA
R
= 10 mA , R = 100 Ω
L
Wave Form
Analyzer
(SAS-8130)
V
= 50 Ω
R
i
SKH00126AED
0.80 ±0.05
1.6 ±0.1
1
2
0.45 ±0.1
0.55 ±0.1
5˚
Mini2-F1 Package
Min Typ Max
0.34 0.38
0.38 0.42
0.42 0.46
100
50
13
Input Pulse Output Pulse
t t
p
r
t
10%
I
F
90%
R
= 2 µs
t I
p F
= 0.35 ns
t I
r R
δ = 0.05
R
Unit: mm
0 to 0.1
+0.1
0.16
–0.06
1: Anode
2: Cathode
Unit
V
µA
pF
ns
t
rr
t
= 10 mA
I
rr
= 100 mA
= 100 mA
= 100 Ω
L
1