Light Emitting Diodes
LN1261CTR
Surface Mounting Chip LED
GW Type
Absolute Maximum Ratings T
Parameter
Power dissipation
Forward current
Pulse forward current
*
Reverse voltage
Operating ambient temperature
Storage temperature
Note) * : The condition of I
is duty 10%, Pulse width 1 msec.
FP
Electro-Optical Characteristics T
Parameter
Luminous intensity
Reverse current
Forward voltage
Peak emission wavelength
Spectral half band width
I
I
O
F
100
50
30
10
5
3
1
0.5
0.3
0.1
1
3
5
10
Forward current I
F
Relative luminous intensity λ
100
80
60
40
20
0
500
600
700
Peak emission wavelength λ
Publication date: January 2009
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
P
60
D
I
20
F
I
60
FP
V
R
T
–25 to +80
opr
T
–30 to +85
stg
= 25°C
a
Symbol
I
I
= 15 mA
O
F
I
V
= 4 V
R
R
V
I
= 20 mA
F
F
λ
I
= 20 mA
P
F
Δλ
I
= 20 mA
F
100
50
30
10
5
3
1
30
50
100
1.6
(mA)
Forward voltage V
P
Directive characteristics
20°
30°
40°
50°
60°
70°
80°
90°
800
100
80
60
40
Relative luminous intensity (%)
(nm)
P
Unit
mW
mA
mA
4
V
°C
°C
Conditions
I
V
F
F
1.8
2.0
2.2
2.4
(V)
F
0°
10°
10°
20°
30°
80°
40°
50°
60°
60°
40°
70°
20°
80°
20
0
20
40
60
80
100
SHD00590BEK
Lighting Color
Red
Min
Typ
Max
0.5
1.4
10
2.2
2.8
700
100
Relative luminous intensity T
1 000
500
300
100
50
30
10
0
20
40
60
−20
Ambient temperature T
I
T
F
a
25
20
15
10
5
90°
0
0
20
40
60
Ambient temperature T
Unit
mcd
µA
V
nm
nm
a
80
100
(°C)
a
80
100
(°C)
a
1