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Panasonic 2SD1938(F) Specification Sheet

Transistors

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Transistors
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
• Low ON resistance R
on
• High forward current transfer ratio h
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
* 2
ON resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Rank classification
Rank
h
FE
Product of no-rank classification is not marked.
Publication date: August 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol
Rating
V
50
CBO
V
20
CEO
V
25
EBO
I
300
C
I
500
CP
P
200
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CEO
C
V
V
BE
CE
I
V
CBO
CB
I
V
EBO
EB
* 1
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
R
on
S
T
500 to 1 500
800 to 2 500
Unit
V
V
V
mA
Marking symbol: 3W
mA
mW
°C
°C
Conditions
= 1 mA, I
= 0
B
= 2 V, I
= 4 mA
C
= 50 V, I
= 0
E
= 25 V, I
= 0
C
= 2 V, I
= 4 mA
C
= 30 mA, I
= 3 mA
B
= 6 V, I
= −4 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
* 2: R
No rank
500 to 2 500
SJC00313AED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
Min
Typ
20
0.6
500
2 500
80
1.0
Measuremet circuit
on
1 kΩ
= 1 mA
I
B
V
V
V
B
V
A
V
=
B
× 1 000 (Ω)
R
on
− V
V
A
B
Unit: mm
+0.10
0.16
–0.06
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Max
Unit
V
V
µA
0.1
µA
0.1
0.1
V
MHz
7
pF
f = 1 kHz
V = 0.3 V
1

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Summary of Contents for Panasonic 2SD1938(F)

  • Page 1 Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter ■ Features • Low ON resistance R • High forward current transfer ratio h • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■...
  • Page 2 2SD1938(F)  T 60 80 100 120 ( °C ) Ambient temperature T  I CE(sat) = 10 = 85°C −25°C 0.01 25°C 0.001 (m A ) Collector current I  V = 25°C IB = 10 µA 8 µA 6 µA 4 µA 2 µA...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.