Transistors
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
• Low ON resistance R
on
• High forward current transfer ratio h
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
* 2
ON resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Rank classification
Rank
h
FE
Product of no-rank classification is not marked.
Publication date: August 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol
Rating
V
50
CBO
V
20
CEO
V
25
EBO
I
300
C
I
500
CP
P
200
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CEO
C
V
V
BE
CE
I
V
CBO
CB
I
V
EBO
EB
* 1
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
R
on
S
T
500 to 1 500
800 to 2 500
Unit
V
V
V
mA
Marking symbol: 3W
mA
mW
°C
°C
Conditions
= 1 mA, I
= 0
B
= 2 V, I
= 4 mA
C
= 50 V, I
= 0
E
= 25 V, I
= 0
C
= 2 V, I
= 4 mA
C
= 30 mA, I
= 3 mA
B
= 6 V, I
= −4 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
* 2: R
No rank
500 to 2 500
SJC00313AED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
Min
Typ
20
0.6
500
2 500
80
1.0
Measuremet circuit
on
1 kΩ
= 1 mA
I
B
V
V
V
B
V
A
V
=
B
× 1 000 (Ω)
R
on
− V
V
A
B
Unit: mm
+0.10
0.16
–0.06
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Max
Unit
V
V
µA
0.1
µA
0.1
0.1
V
MHz
7
pF
Ω
f = 1 kHz
V = 0.3 V
1