Panasonic 2SD1823G Specification Sheet

Transistors
2SD1823G
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• High emitter-base voltage (Collector open) V
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
CE(sat)
EBO
= 25°C
a
Symbol Rating
V 50
CBO
V 40
CEO
V 15
EBO
I 50
C
I 100
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
I V
CEO CE
*
h V
FE CE
V I
CE(sat) C
f V
T CB
R S
400 to 800 600 to 1 200
■ Package
• Code
• Marking Symbol: 1Z
• Pin Name
Unit
V
V
V
mA
mA
mW
°C
°C
Conditions
= 10 µA, I = 0
E
= 1 mA, I = 0
B
= 10 µA, I = 0
C
= 20 V, I = 0
E
= 20 V, I = 0
B
= 10 V, I = 2 mA
C
= 10 mA, I = 1 mA
B
= 10 V, I = −2 mA, f = 200 MHz
E
T
1 000 to 2 000
SJC00375AED
SMini3-F2
1: Base
2: Emitter
3: Collector
Min Typ
50
40
15
400 2 000
0.05
120
Max Unit
V
V
V
µA
0.1
µA
1

0.20 V
MHz
1