Panasonic 2SD1821A Specification Sheet

Transistors
2SD1821A
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
 Features
 High collector-emitter voltage (Base open) V
 Low noise voltage NV
 S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date : October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol Rating
V 185
CBO
V 185
CEO
V 5
EBO
I 50
C
I 100
CP
P 150
C
T 150
j
T –55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 100 mA, I
CEO C
V I = 10 mA, I
EBO E
I V = 100 V, I
CBO CB
h V = 5 V, I
FE CE
V I = 30 mA, I
CE(sat) C
f V = 10 V, I
T CB
C V = 10 V, I
ob CB
V = 10 V, I
CB
NV
R = 100 kΩ, Function = FLAT
g
R S
130 to 220 185 to 330
SJC00425AED
 Package
 Code
SMini3-G1
 Pin Name
1. Base
2. Emitter
3. Collector
Unit
 Marking Symbol: L
V
V
V
mA
mA
mW
°C
°C
Conditions
= 0
B
= 0
C
= 0
E
= 10 mA
C
= 3 mA
B
= –10 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
= 1 mA, G = 80 dB,
C V
Min Typ Max Unit
185
5
1
130 330
1
150 MHz
2.3
150 mV
V
V
mA

V
pF
1