Panasonic 2SD1820G Specification Sheet

Transistors
2SD1820G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219G
■ Features
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
* 1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
V 60
CBO
V 50
CEO
V
EBO
I 500
C
I
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
* 1 * 2
h V
FE1 CE
h V
FE2 CE
* 1
V I
CE(sat) C
f V
T CB
C V
ob CB
Q R
85 to 170 120 to 240
XQ XR
■ Package
• Code
• Marking Symbol: X
• Pin Name
Unit
V
V
5 V
mA
1 A
mW
°C
°C
Conditions
= 10 µA, I = 0
E
= 2 mA, I = 0
B
= 10 µA, I = 0
C
= 20 V, I = 0
E
= 10 V, I = 150 mA
C
= 10 V, I = 500 mA
C
= 300 mA, I = 30 mA
B
= 10 V, I = −50 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
S
170 to 340
XS
SJC00373AED
SMini3-F2
1: Base
2: Emitter
3: Collector
Min Typ
60
50
5
85
40
0.35
200
6
No-rank
85 to 340
X
Max Unit
V
V
V
µA
0.1

340
0.60 V
MHz
15 pF
1