Panasonic 2SD1478A Specification Sheet

Transistors
2SD1478A
Silicon NPN epitaxial planar type darlington
For low frequency amplification
 Features
 Forward current transfer ratio h
driver circuit of motors and printer hammer.
 A shunt resistor is omitted from the driver.
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
* 1, * 2
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE
Publication date: October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
is designed high, which is appropriate to the
FE
= 25°C
a
Symbol Rating
V 60
CBO
V 50
CEO
V 5
EBO
I 500
C
I 750
CP
P 200
C
T 150
j
T -55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 100 mA, I
CBO C
V I = 1 mA, I
CEO C
V I = 100 mA, I
EBO E
I V = 25 V, I
CBO CB
I V = 4 V, I
EBO EB
h V = 10 V, I
FE CE
* 1
V I = 500 mA, I
CE(sat) C
* 1
V I = 500 mA, I
BE(sat) C
f V = 10 V, I
T CB
Q R
4 000 to 10 000 8 000 to 20 000
 Package
 Code
Mini3-G1
 Pin Name
1: Base
2: Emitter
3: Collector
Unit
V
 Marking Symbol: 2O
V
V
 Internal Connection
mA
mA
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= 0
C
= 500 mA
C
= 0.5 mA
B
= 0.5 mA
B
= -50 mA, f = 200 MHz
E
SJC00414AED
C
B
E
Min Typ Max
60
50
5
100
100
4 000 20 000
2.5
3.0
200 MHz
Unit
V
V
V
nA
nA

V
V
1