Transistors
2SD0592A
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
■ Features
• Large collector power dissipation P
• Low collector-emitter saturation voltage V
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
(2SD592A)
C
CE(sat)
= 25°C
a
Symbol
Rating
V
60
CBO
V
50
CEO
V
5
EBO
1
I
C
1.5
I
CP
P
750
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V
I
CBO
C
= 2 mA, I
V
I
CEO
C
= 10 µA, I
V
I
EBO
E
I
V
CBO
CB
*
h
V
FE1
CE
h
V
FE2
CE
= 500 mA, I
V
I
CE(sat)
C
= 500 mA, I
V
I
BE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
85 to 170
120 to 240
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 20 V, I
= 0
E
= 10 V, I
= 500 mA
C
= 5 V, I
= 1 A
C
= 50 mA
B
= 50 mA
B
= 10 V, I
= −50 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
S
170 to 340
SJC00189CED
5.0
±0.2
0.7
±0.1
+0.15
0.45
0.45
–0.1
+0.6
+0.6
2.5
2.5
–0.2
–0.2
1
2 3
TO-92-B1 Package
Min
Typ
Max
60
50
5
0.1
85
340
50
0.2
0.4
0.85
1.20
200
20
Unit: mm
4.0
±0.2
+0.15
–0.1
1: Emitter
2: Collector
3: Base
Unit
V
V
V
µA
V
V
MHz
pF
1