Panasonic 2SD0592 Specification Sheet

Transistors
2SD0592
(2SD592)
Silicon NPN epitaxial planar type
For low frequency amplifi cation
Complementary to 2SB0621 (2SB621)
 Features  Features

 Large collector power dissipation P  Large collector power dissipation P

 Low collector-emitter saturation voltage V  Low collector-emitter saturation voltage V

 Absolute Maximum Ratings  Absolute Maximum Ratings

Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics  Electrical Characteristics

Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classifi cation
Rank
h h h 85 to 170
FE1 FE1
Publication date: May 2006
This product complies with the RoHS Directive (EU 2002/95/EC).
C
CE(sat)
T = 25 = 25 °C
a a a
Symbol Rating
V 30
CBO
V 25
CEO
V 5
EBO
I 1
C
I 1.5
CP
P 750
C
T T T 150
j j
T T T –55 to +150
stg stg
T = 25 = 25 °C±3°C
a a a
Symbol
V I = 10 = 10 µA, I
CBO C C C
V I = 2 mA, I = 2 mA, I
CEO C C C
V I = 10 = 10 µA, I
EBO E E E
I V = 20 V, I
CBO CB
h h h * V = 10 V, I = 10 V, I
FE1 FE1 CE CE CE
h h h V = 5 V, I = 5 V, I
FE2 FE2 CE CE CE
V I = 500 mA, I = 500 mA, I
CE(sat) C C C
V V V I = 500 mA, I = 500 mA, I
BE(sat) BE(sat) C C C
C V = 10 V, I
ob CB
f f f V = 10 V, I
T T CB
Q R
120 to 240 170 to 340
SJC00344AED
0.7
Unit
V
0.45
V
2.5
V
A
A
mW
°C
°C
Conditions
= 0 = 0
E E E
= 0
B
= 0 = 0
C C C
= 0 = 0
E E E
= 500 mA = 500 mA
C C C
= 1 A = 1 A
C C C
= 50 mA
B
= 50 mA
B
= 0, f = 1 MHz = 0, f = 1 MHz
E E E
= —50 mA, f = 200 MHz = —50 mA, f = 200 MHz
E E E
S
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
5.0 4.0
±0.2 ±0.2
±0.1
+0.15 +0.15
0.45
–0.1 –0.1
+0.6 +0.6
2.5
–0.2 –0.2
1 2 3
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Min Typ Max
30
25
5
0.1
85 340
50
0.2 0.4
0.85 1.2
20
200
Unit
V
V
V
µA

V
V
pF
MHz
1