Panasonic 2SA2161G Specifications

Transistors
2SA2161G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037G
■ Features
• Low collector-emitter saturation voltage V
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
−15
V
CBO
−12
V
CEO
−5
V
EBO
−500
I
C
−1
I
CP
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
h V
FE CE
V I
CE(sat) C
f V
T CB
C V
ob CB
Unit
V
V
V
mA
A
mW
°C
°C
Conditions
= −10 µA, I = 0
E
= −1 mA, I = 0
B
= −10 µA, I = 0
C
= −15 V, I = 0
E
= −2 V, I = −10 mA
C
= −200 mA, I = −10 mA
B
= −2 V, I = 10 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
SJC00383AED
■ Package
• Code
SSMini3-F3
• Marking Symbol: 2U
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
−15
−12
−5
− 0.1
270 680
−250
200
4.5
Unit
V
V
V
µA

mV
MHz
pF
1