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❍ Detailed operation
One half-word (16 bits) can be read from the flash memory area in one cycle.
The automatic algorithm can be started by writing a command to flash memory.
When the automatic algorithm starts, data can be written to or erased from flash memory. For
details on the automatic algorithm, see "19.4 Automatic Algorithm of Flash Memory".
For details on the automatic algorithm, see "19.4 Automatic Algorithm of Flash Memory".
❍ Restrictions
•
Address assignment and endians in this mode differ from those for writing with the ROM
writer.
•
This mode inhibits reading data in words (32 bits).
■ Automatic Algorithm Execution Status
When the automatic algorithm is started in CPU programming mode, the operation status of the
automatic algorithm can be checked using the internal Ready/Busy signal (RDY/BUSYX). The
level of this signal can be read as the RDY bit in the flash memory status register.
When the RDY bit is set to "0," data is being written or erased with the automatic algorithm, and
no write or erase command can be accepted. Moreover, data cannot be read from any address in
flash memory.
Data read with the RDY bit set to "0" is a hardware sequence flag to indicate flash memory
status.
CHAPTER 19 FLASH MEMORY
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