Memory (Sdram, Nand-Flash) - Samsung YP-R1 Service Manual

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Schematic Diagram
7-4 Memory (SDRAM, NAND-Flash)
POWER
GND
U501
K4X51323PG-8GC6
DDR_SD_AD[0-12]
DDR_SD_AD[12]
H3
A12
DDR_SD_AD[11]
H2
A11
DDR_SD_AD[10]
J7
A10
DDR_SD_AD[9]
H1
A9
DDR_SD_AD[8]
J3
A8
DDR_SD_AD[7]
J2
A7
DDR_SD_AD[6]
J1
A6
DDR_SD_AD[5]
K3
A5
DDR_SD_AD[4]
K1
A4
DDR_SD_AD[3]
K9
A3
DDR_SD_AD[2]
K7
A2
DDR_SD_AD[1]
J9
A1
DDR_SD_AD[0]
J8
A0
H9
DDR_SD_BA[1]
BA1
H8
DDR_SD_BA[0]
BA0
K8
DDR_SD_DQM[0]
DM0
K2
DDR_SD_DQM[1]
DM1
F8
DDR_SD_DQM[2]
DM2
F2
DDR_SD_DQM[3]
DM3
L8
DDR_SD_DQS[0]
DQS0
L2
DDR_SD_DQS[1]
DQS1
E8
DDR_SD_DQS[2]
DQS2
E2
DDR_SD_DQS[3]
DQS3
G9
DDR_SD_RAS
RAS
G8
DDR_SD_CAS
CAS
G7
DDR_SD_WE
WE
G2
CLK
DDR_SD_CLK
G3
DDR_SD_/CLK
CLK
G1
DDR_SD_CKE
CKE
H7
DDR_SD_CS
CS
GND
NAND_CPU_CS1
U507
DG2735DTN-T1-E4
NAND_CS5
P_3.0V
V+
NC2
NO1
GND
NAND_CS4
GND
U506
NAND_CPU_CS3
DG2735DTN-T1-E4
NAND_CS7
P_3.0V
V+
NC2
NAND_CS6
NO1
GND
GND
7-4
P_1.8V
GND
DDR_SD_DA[0-31]
DDR_SD_DA[31]
DQ31
A2
DDR_SD_DA[30]
DQ30
B3
DDR_SD_DA[29]
DQ29
B2
DDR_SD_DA[28]
DQ28
C3
DDR_SD_DA[27]
DQ27
C2
DDR_SD_DA[26]
DQ26
D3
DDR_SD_DA[25]
DQ25
D2
DDR_SD_DA[24]
E3
DQ24
DDR_SD_DA[23]
DQ23
E7
DDR_SD_DA[22]
DQ22
D8
DDR_SD_DA[21]
DQ21
D7
DDR_SD_DA[20]
DQ20
C8
DDR_SD_DA[19]
DQ19
C7
DDR_SD_DA[18]
DQ18
B8
DDR_SD_DA[17]
DQ17
B7
DDR_SD_DA[16]
DQ16
A8
DDR_SD_DA[15]
DQ15
R2
DDR_SD_DA[14]
DQ14
P3
DDR_SD_DA[13]
DQ13
P2
DDR_SD_DA[12]
DQ12
N3
DDR_SD_DA[11]
DQ11
N2
DDR_SD_DA[10]
M3
DQ10
DDR_SD_DA[9]
DQ9
M2
DDR_SD_DA[8]
DQ8
L3
DDR_SD_DA[7]
DQ7
L7
DDR_SD_DA[6]
DQ6
M8
DDR_SD_DA[5]
DQ5
M7
DDR_SD_DA[4]
DQ4
N8
DDR_SD_DA[3]
DQ3
N7
DDR_SD_DA[2]
P8
DQ2
DDR_SD_DA[1]
DQ1
P7
DDR_SD_DA[0]
DQ0
R8
NC_2
F3
NC_1
F7
INSERT FOR 8G/16G
NAND_CS1
NAND_R/B1
NAND_CPU_CS0
NAND_CS0
NAND_CLE
NAND_CPU_CS1
NAND_CS1
NAND_CS2
NAND_CS1
NAND_ALE
NAND_CPU_CS2
NAND_CS2
NAND_OE
NAND_CPU_CS3
NAND_CS3
NAND_WE
22
NAND_R/B2
R503
NAND_WP
NAND_WP
NAND_CS0
NAND_CPU_CS0
NAND_DQ[0-7]
NAND_CS3
NAND_CS_CTL
NAND_R/B3
NAND_CS3
NAND_CS2
NAND_CPU_CS2
This Document can not be used without Samsung's authorization.
FIRST NAND
U502
K9HCG08U1D
1 N.C_1
N.C_23
48
2 N.C_2
N.C_22
47
NAND_DQ[0-7]
3 N.C_3
N.C_21
46
NAND_R/B3
4 R/B4
N.C_20
45
NAND_DQ[7]
NAND_R/B2
5 R/B3
I/O7
44
NAND_DQ[6]
NAND_R/B1
6 R/B2
I/O6
43
NAND_DQ[5]
NAND_R/B0
7 R/B1
I/O5
42
NAND_DQ[4]
NAND_OE
8 RE
I/O4
41
NAND_CS0
9 CE1
N.C_19
40
NAND_CS1
10 CE2
N.C_18
39
P_3.0V
P_3.0V
11 N.C_4
N.C_17
38
12 VCC_1
VCC_2
37
13 VSS_1
VSS_2
36
NAND_CS2
14 CE3
N.C_16
35
GND
GND
NAND_CS3
15 CE4
N.C_15
34
NAND_CLE
16 CLE
N.C_14
33
NAND_DQ[3]
NAND_ALE
17 ALE
I/O3
32
NAND_DQ[2]
NAND_WE
18 WE
I/O2
31
NAND_DQ[1]
NAND_WP
19 WP
I/O1
30
NAND_DQ[0]
20 N.C_5
I/O0
29
21 N.C_6
N.C_13
28
22 N.C_7
N.C_12
27
23 N.C_8
N.C_11
26
24 N.C_9
N.C_10
25
FIRST NAND
K9PDG08U5D-LCB0
U503
R/B1-1
E5
NAND_R/B0
A1
CE2-1
E3
WE1
A7
NAND_WE
R/B2-1
C7
RE1
C3
NAND_OE
CLE2
A5
CE1-1
C5
NAND_CS0
CE1-2
ALE1
C1
D2
NAND_ALE
ALE2
CLE1
A3
D6
NAND_CLE
RE2
E1
WE2
E7
R/B1-2
P_3.0V
N7
F2
WP1
VCC_4
NAND_DQ[0]
G1
N1
IO0-2
VCC_3
G5
M6
WP2
VCC_2
NAND_DQ[7]
G7
B6
IO7-2
VCC_1
NAND_DQ[1]
J1
M2
IO1-2
VSS_4
NAND_DQ[6]
J7
L3
IO6-2
VSS_3
NAND_DQ[2]
L1
F6
IO2-2
VSS_2
NAND_DQ[5]
L7
B2
IO5-2
VSS_1
NAND_DQ[3]
N3
GND
IO3-2
NAND_DQ[4]
N5
IO4-2
NAND_DQ[0]
IO0-1
G3
NAND_DQ[1]
IO1-1
H2
A
CE2-2
IO2-1
J3
NAND_DQ[2]
B
NC_1
IO3-1
K2
NAND_DQ[3]
C
NC_2
IO4-1
L5
NAND_DQ[4]
P_3.0V
D
NC_3
NAND_DQ[5]
IO5-1
K6
E
NC_4
NAND_DQ[6]
IO6-1
J5
F
NC_5
NAND_DQ[7]
C514
IO7-1
H6
G
NC_6
100nF
H
VSS_5
NAND_DQ[0-7]
I
NC_7
J
NC_8
K
NC_9
L
R/B2-2
GND
O:INSERT
X
:NC
NAND option resistor and IC Selection
8GB/4GB
16GB
LOCATION
32GB
O
X
X
U502
X
U503
O
O
X
O
U504
X
X
X
O
U506
X
X
O
U507
O
O
O
R502
X
O
O
R503
O
R504
X
X
O
O
O
R505
X
X
O
R506
X
X
O
R507
O
O
X
R508
X
X
O
R501
P_3.0V
P_3.0V
R502
P_3.0V
4.7K
R505
4.7K
NAND_CS3
NAND_R/B0
NAND_CS2
NAND_R/B1
32GB
NAND_CS1
NAND_R/B2
NAND_CS0
NAND_R/B3
P_3.0V
R506
R504
4G/8G/16G
4.7K
4.7K
NAND_R/B4
NAND_CS7
NAND_R/B5
NAND_CS6
NAND_R/B6
NAND_CS5
NAND_R/B7
NAND_CS4
SECOND NAND
K9PDG08U5D-LCB0
U504
E5
R/B1-1
NAND_R/B4
A1
NAND_CS5
CE2-1
WE1
E3
A7
NAND_WE
NAND_R/B5
R/B2-1
RE1
C7
C3
NAND_OE
NAND_CLE
CLE2
CE1-1
A5
C5
NAND_CS4
CE1-2
NAND_CS6
ALE1
C1
D2
NAND_ALE
ALE2
NAND_ALE
CLE1
A3
NAND_CLE
D6
RE2
NAND_OE
E1
NAND_WE
WE2
E7
NAND_R/B6
R/B1-2
P_3.0V
F2
N7
NAND_WP
WP1
VCC_4
NAND_DQ[0]
G1
N1
IO0-2
VCC_3
G5
M6
NAND_WP
WP2
VCC_2
NAND_DQ[7]
G7
B6
IO7-2
VCC_1
NAND_DQ[1]
J1
M2
IO1-2
VSS_4
NAND_DQ[6]
L3
J7
IO6-2
VSS_3
NAND_DQ[2]
L1
F6
IO2-2
VSS_2
NAND_DQ[5]
L7
B2
IO5-2
VSS_1
GND
NAND_DQ[3]
N3
IO3-2
NAND_DQ[4]
N5
IO4-2
NAND_DQ[0-7]
IO0-1
G3
NAND_DQ[0]
IO1-1
H2
NAND_DQ[1]
A
CE2-2
NAND_CS7
NAND_DQ[2]
IO2-1
J3
B
NC_1
NAND_DQ[3]
IO3-1
K2
C
NC_2
NAND_DQ[4]
IO4-1
L5
P_3.0V
D
NC_3
NAND_DQ[5]
IO5-1
K6
E
NC_4
NAND_DQ[6]
IO6-1
J5
F
NC_5
IO7-1
H6
NAND_DQ[7]
C517
100nF
G
NC_6
H
VSS_5
I
NC_7
J
NC_8
K
NC_9
L
R/B2-2
NAND_R/B7
GND
NAND_SELECT
GND
NAND_DQ[0-7]
Samsung Electronics

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