NXP Semiconductors PBLS4004D Product Data Sheet
NXP Semiconductors PBLS4004D Product Data Sheet

NXP Semiconductors PBLS4004D Product Data Sheet

40 v pnp biss loadswitch

Advertisement

Quick Links

1. Product profile

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

PBLS4004D
40 V PNP BISS loadswitch
Rev. 03 — 6 January 2009
PNP low V
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
CEsat
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
I
Low V
(BISS) and resistor-equipped transistor in one package
CEsat
I
Low threshold voltage (< 1 V) compared to MOSFET
I
Low drive power required
I
Space-saving solution
I
Reduction of component count
I
Supply line switches
I
Battery charger switches
I
High-side switches for LEDs, drivers and backlights
I
Portable equipment
Table 1.
Quick reference data
Symbol
Parameter
TR1; PNP low V
transistor
CEsat
V
collector-emitter voltage
CEO
I
collector current
C
R
collector-emitter saturation
CEsat
resistance
TR2; NPN resistor-equipped transistor
V
collector-emitter voltage
CEO
I
output current
O
R1
bias resistor 1 (input)
R2/R1
bias resistor ratio
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
[2]
Pulse test: t
300 s;
p
Conditions
open base
I
= 500 mA;
C
I
= 50 mA
B
open base
0.02.
Product data sheet
Min
Typ
Max
-
-
[1]
-
-
[2]
-
240
340
-
-
50
-
-
100
15.4
22
28.6
0.8
1
1.2
O
, standard footprint.
2
3
Unit
40
V
1
A
m
V
mA
k

Advertisement

Table of Contents
loading
Need help?

Need help?

Do you have a question about the PBLS4004D and is the answer not in the manual?

Questions and answers

Summary of Contents for NXP Semiconductors PBLS4004D

  • Page 1: Product Profile

    PBLS4004D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 1. Product profile 1.1 General description PNP low V Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low V Low threshold voltage (< 1 V) compared to MOSFET...
  • Page 2: Pinning Information

    NXP Semiconductors 2. Pinning information Table 2. 3. Ordering information Table 3. Type number PBLS4004D 4. Marking Table 4. Type number PBLS4004D 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR1; PNP low V...
  • Page 3 NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR2; NPN resistor-equipped transistor Per device Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm...
  • Page 4: Thermal Characteristics

    NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 6. Symbol Per device th(j-a) Per TR1; PNP low V th(j-sp) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
  • Page 5 NXP Semiconductors th(j-a) 0.75 (K/W) 0.33 0.05 0.02 0.01 FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) 0.75 0.33 0.05 0.02 0.01 FR4 PCB, mounting pad for collector 1 cm Fig 3.
  • Page 6: Characteristics

    NXP Semiconductors th(j-a) (K/W) 0.75 0.33 0.05 0.02 0.01 Ceramic PCB, Al , standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. = 25 C unless otherwise specified.
  • Page 7 NXP Semiconductors Table 7. = 25 C unless otherwise specified. Symbol Parameter TR2; NPN resistor-equipped transistor CEsat I(off) I(on) R2/R1 Pulse test: t PBLS4004D_3 Product data sheet Characteristics …continued Conditions transition frequency = 50 mA; V f = 100 MHz collector capacitance = 10 V;...
  • Page 8 NXP Semiconductors 1200 = 5 V (1) T = 100 C (2) T = 25 C (3) T = 55 C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values = 5 V (1) T...
  • Page 9 NXP Semiconductors CEsat = 20 (1) T = 100 C (2) T = 25 C (3) T = 55 C Fig 9. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values CEsat = 20 (1) T...
  • Page 10 NXP Semiconductors = 5 V (1) T = 150 C (2) T = 25 C (3) T = 40 C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values I(on) = 0.3 V (1) T...
  • Page 11: Package Outline

    NXP Semiconductors 8. Package outline Fig 17. Package outline SOT457 (SC-74) 9. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBLS4004D For further information and the availability of packing methods, see...
  • Page 12: Soldering

    NXP Semiconductors 10. Soldering Fig 18. Reflow soldering footprint SOT457 (SC-74) 1.475 5.05 1.475 Fig 19. Wave soldering footprint SOT457 (SC-74) PBLS4004D_3 Product data sheet 3.45 1.95 0.95 2.825 0.95 (6 ) (6 ) 1.45 (6 ) 2.85 Rev. 03 — 6 January 2009...
  • Page 13: Revision History

    Release date PBLS4004D_3 20090106 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Figure •...
  • Page 14: Contents

    For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
  • Page 15: Table Of Contents

    NXP Semiconductors 14. Contents Product profile ......1 General description..... . 1 Features .

Table of Contents