1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PBLS4004D
40 V PNP BISS loadswitch
Rev. 03 — 6 January 2009
PNP low V
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
CEsat
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
I
Low V
(BISS) and resistor-equipped transistor in one package
CEsat
I
Low threshold voltage (< 1 V) compared to MOSFET
I
Low drive power required
I
Space-saving solution
I
Reduction of component count
I
Supply line switches
I
Battery charger switches
I
High-side switches for LEDs, drivers and backlights
I
Portable equipment
Table 1.
Quick reference data
Symbol
Parameter
TR1; PNP low V
transistor
CEsat
V
collector-emitter voltage
CEO
I
collector current
C
R
collector-emitter saturation
CEsat
resistance
TR2; NPN resistor-equipped transistor
V
collector-emitter voltage
CEO
I
output current
O
R1
bias resistor 1 (input)
R2/R1
bias resistor ratio
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
[2]
Pulse test: t
300 s;
p
Conditions
open base
I
= 500 mA;
C
I
= 50 mA
B
open base
0.02.
Product data sheet
Min
Typ
Max
-
-
[1]
-
-
[2]
-
240
340
-
-
50
-
-
100
15.4
22
28.6
0.8
1
1.2
O
, standard footprint.
2
3
Unit
40
V
1
A
m
V
mA
k