PBLS4004D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 1. Product profile 1.1 General description PNP low V Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low V Low threshold voltage (< 1 V) compared to MOSFET...
NXP Semiconductors 2. Pinning information Table 2. 3. Ordering information Table 3. Type number PBLS4004D 4. Marking Table 4. Type number PBLS4004D 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR1; PNP low V...
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NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR2; NPN resistor-equipped transistor Per device Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm...
NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 6. Symbol Per device th(j-a) Per TR1; PNP low V th(j-sp) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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NXP Semiconductors th(j-a) 0.75 (K/W) 0.33 0.05 0.02 0.01 FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) 0.75 0.33 0.05 0.02 0.01 FR4 PCB, mounting pad for collector 1 cm Fig 3.
NXP Semiconductors th(j-a) (K/W) 0.75 0.33 0.05 0.02 0.01 Ceramic PCB, Al , standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. = 25 C unless otherwise specified.
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NXP Semiconductors Table 7. = 25 C unless otherwise specified. Symbol Parameter TR2; NPN resistor-equipped transistor CEsat I(off) I(on) R2/R1 Pulse test: t PBLS4004D_3 Product data sheet Characteristics …continued Conditions transition frequency = 50 mA; V f = 100 MHz collector capacitance = 10 V;...
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NXP Semiconductors 1200 = 5 V (1) T = 100 C (2) T = 25 C (3) T = 55 C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values = 5 V (1) T...
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NXP Semiconductors CEsat = 20 (1) T = 100 C (2) T = 25 C (3) T = 55 C Fig 9. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values CEsat = 20 (1) T...
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NXP Semiconductors = 5 V (1) T = 150 C (2) T = 25 C (3) T = 40 C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values I(on) = 0.3 V (1) T...
NXP Semiconductors 8. Package outline Fig 17. Package outline SOT457 (SC-74) 9. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBLS4004D For further information and the availability of packing methods, see...
Release date PBLS4004D_3 20090106 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Figure •...
For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
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