Panasonic 2SA1738 Specification Sheet

Transistors
2SA1738
Silicon PNP epitaxial planar type
For high speed switching
■ Features
• High speed switching (Pair with 2SC3757)
• Low collector-emitter saturation voltage V
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Publication date: November 2002
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
−15
V
CBO
−15
V
CEO
−4
V
EBO
−50
I
C
−100
I
CP
P 200
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
I V
EBO EB
*
h V
FE1 CE
h V
FE2 CE
= −10 mA, I
V I
CE(sat) C
f V
T CB
C V
ob CB
t Refer to the switching time measurement circuit
on
t
off
t
stg
Q R
50 to 120 90 to 150
10˚
Unit
V
V
V
mA
mA
Marking Symbol: AK
mW
°C
°C
Conditions
= −8 V, I = 0
E
= −3 V, I = 0
C
= −1 V, I = −10 mA
C
= −1 V, I = −1 mA
C
= −1 mA
B
= −10 V, I = 10 mA, f = 200 MHz
E
= −5 V, I
= 0, f = 1 MHz
E
SJC00026BED
+0.10
0.40
–0.05
0.16
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Min Typ Max
− 0.1
− 0.1
50 150
30
− 0.1 − 0.2
800 1 500
1
12
20
19
Unit: mm
+0.10
–0.06
Unit
µA
µA

V
MHz
pF
ns
ns
ns
1