Zener Diodes
MALHxxxYG Series
Silicon planar type
For constant voltage, constant current, waveform clipper and surge absorption circuit
Features
Extremely low noise voltage caused from the diode
Extremely good rising performance (in the low-current range)
Independent wiring of two element
Absolute Maximum Ratings T
Parameter
Repetitive peak forward current
Total power dissipation
*
Junction temperature
Storage temperature
Note) * : P
= 150 mW achieved with a printed circuit board.
T
Common Electrical Characteristics T
Parameter
Forward voltage
* 1
Zener voltage
Zener rise operating resistance
Zener operating resistance
Reverse current
Temperature coefficient of zener voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. The temperature must be controlled 25°C for V
V
value measured at other temperature must be adjusted to V
Z
4. * 1 : V
guaranted 20 ms after current flow.
Z
* 2 : T
= 25°C to 150°C
j
Publication date: October 2008
This product complies with RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
I
200
FRM
P
150
T
T
150
j
T
–55 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= 10 mA
F
F
V
I
Z
Z
R
I
ZK
Z
R
I
Z
Z
I
V
R
R
* 2
S
I
Z
Z
mesurement.
Z
Z
SKE00047AED
Package
Code
SMini4-F2
Pin Name
1: Anode 1
2: Anode 2
Unit
Marking symbol
mA
Refer to the list of the electrical
mW
characteristics within part numbers
°C
°C
Conditions
Specified value
Specified value
Specified value
Specified value
Specified value
(25°C)
3: Cathode 2
4: Cathode 1
Min
Typ
Max
0.9
1.0
Refer to the list of the
electrical characteristics
within part numbers
Unit
V
V
W
W
mA
mV/°C
1